Determination of the Ehrlich-Schwoebel barrier in epitaxial growth of thin films

نویسندگان

  • Shao-Chun Li
  • Y. Han
  • Jin-Feng Jia
  • Qi-Kun Xue
  • Feng Liu
چکیده

We demonstrate an approach for determining the “effective” Ehrlich-Schwoebel ES step-edge barrier, an important kinetic constant to control the interlayer mass transport in epitaxial growth of thin films. The approach exploits the rate difference between the growth and/or decay of an adatom and a vacancy twodimensional island, which allows the “effective” ES barrier to be determined uniquely by fitting with a single parameter. Application to growth of Pb islands produces an effective ES barrier of 83±10 meV on Pb 111 surface at room temperature.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Inverted Wedding Cake Growth Operated by the Ehrlich-Schwoebel Barrier in Two-Dimensional Nanocrystal Evolution.

Wedding cake growth is a layer-by-layer growth model commonly observed in epitaxial growth of metal films, featured by repeated nucleation of new atomic layers on the topmost surface owing to the confinement of the Ehrlich-Schwoebel (ES) barrier. Herein, we report an inverted wedding cake growth phenomenon observed in two-dimensional nanostructure evolution. Through a dynamically controlled vap...

متن کامل

Ultraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations

In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...

متن کامل

A new diffuse-interface model for step flow in epitaxial growth

In this work, we consider epitaxial growth of thin crystalline films. Thereby, we propose a new diffuse-interface approximation of a semi-continuous model resolving atomic distances in the growth direction but being coarse-grained in the lateral directions. Mathematically, this leads to a free boundary problem proposed by Burton, Cabrera and Frank for steps separating terraces of different atom...

متن کامل

A level set approach for diffusion and Stefan-type problems with Robin boundary conditions on quadtree/octree adaptive Cartesian grids

Keywords: Level set method Epitaxial growth Diffusion Stefan problem Sharp interface Robin boundary condition a b s t r a c t We present a numerical method for simulating diffusion dominated phenomena on irregular domains and free moving boundaries with Robin boundary conditions on quadtree/ octree adaptive meshes. In particular, we use a hybrid finite-difference and finite-volume framework tha...

متن کامل

High-Order Surface Relaxation vs. the Ehrlich-Schwoebel Effect

We consider a class of continuum models of epitaxial growth of thin films with two competing mechanisms: (1) the surface relaxation described by high-order gradients of the surface profile; and (2) the Ehrlich-Schwoebel (ES) effect which is the asymmetry in the adatom attachment and detachment to and from atomic steps. Mathematically, these models are gradient-flows of some effective free-energ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006